Abstract
SiC thin films on Si(111) were grown using solid state evaporation at relatively low temperatures. Growth rates of 3–10 nm min−1 have been achieved at 750–900 °C. Results obtained from IR spectroscopy, Auger electron spectroscopy and X-ray diffraction indicate good crystalline growth at T > 800 °C, in the case of a stoichiometric composition. The crystallinity was found to be deteriorated in layers with excess Si or C. In addition, shifts in the IR absorption peak indicate that the non-stoichiometric layers were highly stressed. Annealing of non-stoichiometric layers shifts the peak to the position obtained for stoichiometric layers.
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