Abstract
Si-added SrBi2Ta2O9 (SBT) ferroelectric thin films were formed by RF magnetron sputtering on a Pt/Ti/SiO2/Si structure. The substrate was heated from 400°C to 650°C to crystallize SBT films. Sputtering power and Ar/O2 pressure were 75 W and 3.0 Pa, respectively. It was found that the Si-added SBT films were crystallized at a deposition temperature between 500°C and 600°C, which was much lower than the conventional annealing temperature (800°C) of the film deposited at room temperature. * Originally presented at 10th European Meeting on Ferroelectricity, Cambridge, United Kingdom, August 3–8, 2003.
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