Abstract
The self-aligned in-line technique has been applied to the preparation of ultrasmall low-capacitance metallic tunnel junctions. By using e-beam lithography the area of Al/AlOx/Al contacts has so far been reduced to less than 0.005 μm2. At low temperatures high-ohmic double junctions with a small metallic island between them show the Coulomb blockade effect. The current through such a device could be modulated by a voltage applied to a gate electrode capacitively coupled to the island (single-electron transistor). Both single-charge phenomena have been observed at temperatures up to 1 K.
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