Preparation of Q-copper indium sulfide thin films by liquid–liquid interface reaction technique (LLIRT)

Abstract

Thin films of I–III–VI 2 ternary semiconductor compound, CuInS 2, with the chalcopyrite structure were prepared by the “liquid–liquid interface reaction technique” (LLIRT). The films were characterized by electron diffraction (ED), UV–Vis spectroscopy and X-ray photoelectron spectroscopy (XPS). The d values calculated from the ED ring pattern matched with the d values reported for CuInS 2. The onset of optical absorption is at 700 nm, which suggests the nanonature of the material. The XPS data support the stoichiometric formation of CuInS 2 without any impurity phases as inferred from ED studies.