Abstract
We investigate the p-type doping in ZnO prepared by metal–organic vapor phase epitaxy, using dimethylhydrazine (DMHy) as a nitrogen dopant source. Results obtained from X-ray photoelectron spectroscopy show that DMHy exhibits a narrow temperature window from 500 to 550 °C for efficient nitrogen doping. Additional co-doping with Ga significantly enhances the nitrogen incorporation and the conductivity type of the co-doped ZnO film is critically influenced by N/Ga flux ratio in growth. The fabricated p-type ZnO film shows a hole concentration of about 2.41 × 10 18 cm −3 and hole mobility of about 4.29 cm 2 V −1 s −1. The corresponding nitrogen acceptor level is calculated to be about 160 meV from the PL spectrum. I– V characterization of a p-ZnO:(N,Ga)/n-ZnO homojunction shows clear rectifying behavior with a turn-on voltage of about 3.7 V.
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