Abstract
A new method to prepare p-type CdS thin film was investigated, in which the laser ablation was applied to a mixed target of CdS and Cu. The p-type CdS film was obtained from a target containing more than 5 at% Cu. Composition analysis showed that Cu content in the film was about one-fifth of that in target. The formation of p-type CdS film was also confirmed by the photovoltaic effect of the p-n junction which was constructed by laminating n-type CdS film and p-type CdS film.
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