Abstract
Abstract Potassium tantalate (KT) KTaO 3 thin films of both pyrochlore and perovskite cubic structures were prepared through the chemical solution deposition (CSD). A homogeneous and stable precursor solution was obtained from potassium iso-butoxide and tantalum iso-butoxide in absolute iso-butanol with an additive of diethanolamine as a stabilizer. The effects of K:Ta sol stoichiometry, type of substrate (both amorphous, and single crystal substrates), type of buffer interlayer [Al 2 O 3 , Y-stabilized ZrO 2 (YSZ), PbTiO 3 , PbTiO 3 –Al 2 O 3 composite, KNbO 3 (KN)], and annealing regime on the kinetics of pyrochlore to perovskite transition has been studied. KT perovskite films have been successfully prepared on (100)MgO, and (0001)Al 2 O 3 . Using SiO 2 and Si substrates, perovskite films have been obtained via insertion of Al 2 O 3 and KNbO 3 buffer layers.
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