Abstract
The utilization of Pb1−xSnxTe epitaxial films in high-density forward-looking infrared (FLIR) arrays has been hampered thus far by cleavage steps in the substrates. We have developed a chemical-mechanical polishing technique for the (111) surface of BaF2 which leaves this substrate material single crystal and almost damage free. X-ray data on the polished BaF2 and the Pb0.8Sn0.2Te epitaxial film indicate single-crystal surfaces with very little damage. Furthermore, the electrical properties of the Pb0.8Sn0.2Te epitaxial film are sufficient for FLIR applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.