Abstract
The utilization of Pb1−xSnxTe epitaxial films in high-density forward-looking infrared (FLIR) arrays has been hampered thus far by cleavage steps in the substrates. We have developed a chemical-mechanical polishing technique for the (111) surface of BaF2 which leaves this substrate material single crystal and almost damage free. X-ray data on the polished BaF2 and the Pb0.8Sn0.2Te epitaxial film indicate single-crystal surfaces with very little damage. Furthermore, the electrical properties of the Pb0.8Sn0.2Te epitaxial film are sufficient for FLIR applications.
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