Abstract
Single crystal silicon (sc-Si) wafers are widely used as the precursors to prepare silicon nanowires (SiNWs) by employing a silver-assisted chemical etching process. In this work, we obtained SiNWs arrays using multicrystalline silicon (mc-Si) wafers. Firstly, silver nanoparticles were deposited on the textured solar-grade mc-Si wafer by a galvanic displacement process; secondly, the SiNWs arrays were formed by a silver-assisted chemical etching process conducted in a HF-H2O2 aqueous solution. The etching process indicated that the growth of SiNWs is independent on the orientation of the Si wafer. TEM images showed that the SiNWs have rough and nanoporous structures on the top side along axial directions. The photoluminescence (PL) spectrum of SiNWs showed a broad visible emission centred around 700 nm, which is attributed to the emission properties of silicon nanocrystallites in SiNWs. This work may contribute to the development of SiNWs in application including optoelectronic devices, solar energy conversion devices, chemical sensors, and lithium secondary batteries, etc.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
