Abstract
Dielectric PbTiO3-thin films were prepared on p-Si(100) substrate by plasma enhanced metalorganic chemical vapor deposition using high purity Ti(O-i-C3H7)4, Pb(tmhd)2, and oxygen. As-deposited films were post-treated by rapid thermal annealing method, and the effect of annealing was examined under various conditions. The deposition process was controlled by mixed-control scheme at temperatures lower than 350°C, but controlled by heterogeneous surface reaction at temperatures greater than 350°C. The as-deposited films showed PbO structure at 350∼400°C, but (100) and (101) PbTiO3 orientations started to appear at 450°C. The deposition rate was increased with rf power due to the enhanced dissociation of Ti and Pb precursors. It was found that the concentration of oxygen plays an important role in crystallization of PbTiO3 during the rapid thermal annealing. A linear relationship was obtained between the dielectric constant of PbTiO3 films and the annealing temperature. However, the surface roughness and leakage current density increased mainly due to the defects caused by volatilization of lead and the interface layer formed during the high temperature annealing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.