Abstract
PbTiO3 thin films having a considerably good ferroelectric property have been prepared on Pt foil and Si wafer by rf sputtering at low temperatures of 350∼450°C and a subsequent laser annealing treatment using a cw CO2 laser. A clear phase transition from the paraelectric phase to the ferroelectric phase in the irradiated region has been found without temperature rise of the periferal region. Laser annealing effects of electronic properties of SiO2–Si interface have been also investigated in MOS structures with the PbTiO3 film by DLTS method and it is found that Pt electrode on SiO2, is effective to avoid a deterioration of electronic state near the interface.
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