Abstract
p-Type ZnSe has been obtained by liquid-phase epitaxy (LPE) using LiF as a doping material. The growth has been performed between 950 and 848°C for different values of cooling rate. Low cooling rates have been used to reduce the self-compensation effects. Light-emitting diodes have been obtained by LPE growth of p-type layers on ZnSe : Cl substrates. The electroluminescence of the device is characterized by a single band centred at 2.675 eV.
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