Abstract
We report on Sb-doped p-type Zn0.95Mg0.05O thin films grown by pulsed laser deposition. The Sb-doped Zn0.95Mg0.05O films show an acceptable p-type conductivity with a resistivity of 126 Ω cm, a Hall mobility of 1.71 cm2 V−1 s−1 and a hole concentration of 2.90 × 1016 cm−3 at room temperature. Secondary ion mass spectroscopy confirms that Sb has been incorporated into the Zn0.95Mg0.05O films. Guided by x-ray photoemission spectroscopy analysis and a model for large-size-mismatched group-V dopants in ZnO, an SbZn–2VZn complex is believed to be the most possible acceptor in the Sb-doped p-type Zn0.95Mg0.05O thin films.
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