Preparation of p-type Hydrogenated Nanocrystalline Cubic Silicon Carbide / n-type Crystalline Silicon Heterojunction Solar Cells by VHF-PECVD

Abstract

Aluminum doped p-type hydrogenated nanocrystalline cubic silicon carbide (Al-doped p-nc-3C-SiC:H) thin films were successfully deposited by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) on n-type c-Si (n-c-Si) without serious damage by inserting an a-Si1-xCx:H buffer layer at p-nc-3C-SiC:H/n-c-Si interface as a protective layer against atomic hydrogen etching and a passivation layer. As a result, an active area efficiency of 17.0% has been achieved without texturing [Voc=0.648 V, Jsc=35.9 mA/cm2, FF=0.732].