Preparation of p-type GaAs layers for ohmic contact

Abstract

The open-tube diffusion of zinc is used for the preparation of p-type layers in gallium arsenide. The process provides the capability of forming reproducible deep diffusions (0.4–2 Μm) over short diffusion times and in the temperature range 600–650 ‡C. TiPdAu contacts are prepared on these layers. Using cw laser annealing we have obtained specific contact resistance 6.5 × 10−7Ωcm2.