Abstract
Ohmic electrodes in the form of n-type (Si-doped) cubic boron nitride (c-BN) bulkcrystals were fabricated by utilizing a covering technique, depositing Ti(10nm)/Mo/(20 nm)/Pt–Au(200 nm) ohmic contact metal on both the sides of thec-BN substrate. The size of the specimen electrode was 100 × 100 μ m2 on one sideand 300 × 300 μm2 on the other side. Measurements on the specimen were made using a speciallymade device. Linear current–voltage characteristics were obtained. It isconsidered that the contact between the Ti-and Si-doped c-BN was ohmic.
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