Preparation of n-type conductive transparent thin films of AgInO2:Sn with delafossite-type structure by pulsed laser deposition

Abstract

Sn-doped AgInO2 thin films were prepared on α-Al2O3(0001) single-crystal substrates by pulsed laser deposition. The films prepared under optimized conditions have high optical transmittance up to the near-ultraviolet region and high electrical conductivity. The optical band gap was estimated to be ∼4.1 eV, and electrical conductivity was 7.3×101S cm−1 at 300 K. The carrier concentration and Hall mobility at 300 K were 3.3×1020 cm−3 and 1.4 cm2 V−1s−1, respectively.