Abstract
Radical-assisted metalorganic chemical vapor deposition of ZnSe thin films was made using nitrogen trifluoride (NF3) as co-reactant and source of nitrogen atoms. The secondary ion mass spectroscopy analysis indicated that the concentration profile of nitrogen in a ZnSe film was not uniform in regard to the thickness and was the order of magnitude of 10 25 -10 26 m -3 . The photoluminescence (PL) spectra of all the films showed weak excitonic emission bound due to the neutral nitrogen atom pair (r N-N t ) and intense donor-acceptor pair emission (DAP). The net acceptor concentration obtained from capacitance-voltage measurements was 1.3 x 10 23 m -3 at maximum, which increased to 1.3 x 10 24 m -3 after heat-treatment.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
