Abstract
Nickel silicide nanowires are promising interconnection and gate materials for one dimensional nanoelectronic devices. In this report, NiSi2 nanowires with low resistivity of 23.5 µΩ cm were prepared by nickel sputtering on silicon nanowires and 550 °C annealing. High resolution transmission microscopy, selective area electron diffraction and energy dispersive X-ray spectroscopy were used to characterize the structure and composition of NiSi2 nanowires. Four-terminal electrical measurement was used to verify the electrical property of nanowires. A low energy implantation mechanism is introduced to explain the formation of silicon rich nickel silicide.
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