Abstract
Preparation of Nc-Si/A-Sio2 Multi-Layer Thin Film Specimens for TEM Cross-Section Observation by Cryo Argon Ion Slicing
Highlights
Silicon multi-layered thin films are subject of the recent research to play a key role in solar cell technology
The annealed thin film of nanocrystalline silicon (nc-Si)/a-SiO2 deposited on c-Si substrate shows the diffraction peaks at 28.5 °C, 47.5 °C and 56.3 °C corresponding to nc-Si orientations of (111), (220) and (311) planes, respectively, which are declined from the film surface about 13.75°, 23.25° and 27.65°
The multi-layered, textured structure is responsible for the surface light scattering due to the heterogeneity of the deposited thin layers [12,13]. (Figure 5) shows the silicon L map of the nc-Si/aSiO2 layers from EFTEM (Energy Filtered TEM), which clearly shows the contrast between crystalline and amorphous regions
Summary
Silicon multi-layered thin films are subject of the recent research to play a key role in solar cell technology. The preparation of cross-sectional specimens is usually done by fabricating a sandwich structure (Si substrate/Thin film/Glue/Cover glass) Juniper Online Journal Material Science and subsequently thinning it in the direction perpendicular to its cross-section (perpendicular to film surface) to make transparent (thickness of the order of
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