Abstract

AbstractIn order to make a thin film of sodium silicide (NaSi), Na was evaporated onto a Si substrate, and the evaporated Na film was annealed under Ar atmosphere without exposure to the air. The annealing condition with 350 °C for 4 h yielded the XRD patterns characteristics of NaSi, indicating the formation of the NaSi on the Si substrate (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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