Abstract
N-type pyrite thin films have been prepared by sulfuration at 350°C of flash evaporated Fe−X (X =Al, Cu, Ni) layers. Physical and structural properties have been investigated. XRD showed pyrite structure. Room temperature dark resistivity of the films varies from 0.21 to 7·10 -4 Ω·cm depending on the impurity concentration. Hall mobilities are between 1 and 10 4 cm 2/V·s. Optical properties are also drastically affected by doping.
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