Preparation of Mono-Layered Ag Nanoparticles for Charge-Trap Sites of Memory Thin-Film Transistors Using In-Ga-Zn-O Channel

Abstract

We propose a methodology for the formation of silver (Ag) nanoparticle monolayer as charge trapping layer of nonvolatile memory thin-film transistor using an indium-gallium-zinc oxide semiconductor channel layer. Atomic-layer-deposited Al2O3-amine treatment Ag configuration were employed as tunneling/charge-trap layers, respectively. The memory devices showed wide memory window of 8.0 V, when the gate voltage was swept from −20 to 20 V. The high on/off current ratios of 5.81 × 105 and 1.29 × 103 could be obtained for the memory device, when the program pulse duration was reduced to 1 μs and 5 ns, respectively. The Ag nanoparticle monolayer could be prepared by using the amine-functionalized Al2O3 layer. The areal density of Ag nanoparticle was controlled by modulating the Ag ratio in polystyrene (PS) mixture and optimized at Ag:PS ratio of 5:5.