Abstract
A thin film formation of MnSi and MnSi 1.7 on a silicon substrate through solid phase reaction has been studied, where MnSi 1.7 is one of the few semiconducting silicides, while MnSi is a metallic one. The growth process and electronic states of manganese silicides with composition of MnSi and MnSi 1.7 are investigated by several methods, including soft X-ray emission spectroscopy.
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