Preparation of La-doped Yb-123 thin films for high- Tc devices

Abstract

We fabricated superconducting La-doped Yb-123 thin films on LSAT substrates by a pulsed laser deposition technique. Simultaneous partial substitution of La for Yb and Ba is effective to prepare impurity-free Yb-123 thin films with a very smooth surface. Pure 123-type thin films with c-axis orientation were successfully prepared at substrate temperatures of 650–700 °C. These films exhibited T c(zero)'s of 74–79 K. The present La-doped Yb-123 film is useful for fabrication of high- T c devices, particularly the upper layers of multilayer structures.