Abstract

Abrasives directly affect the polishing rate and surface quality for sapphire chemical mechanical polishing (CMP). In this work, irregular silica nano-abrasives were synthesised by nickel ion-induced effect combined with growth method in order to simultaneously acquire a high polishing rate and a smooth and flat surface quality on sapphire. The synthesis process of irregular silica nano-abrasives is predicted and analysed by zeta potential. The irregular silica nano-abrasives have a distinguished CMP behaviour for a 22.72% increase in polishing rate and a flat surface quality of sapphire. X-ray photoelectron spectroscopy analysis results have confirmed these solid-phase chemical reactions happen during the sapphire CMP process. In addition, it was analysed about the polishing process and mechanism by establishing a contact model between nano-abrasives and sapphire.

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