Abstract
AbstractThe epitaxial growth of InN by the open tube flow method using the interaction of InCl3 and NH3 is discussed. The influence of various technological parameters on the process and structure perfection of the epitaxial layers, grown on the single crystal (0001)‐oriented sapphire substrates is considered. The main kinetic dependences of the process are plotted and discussed.InN epitaxial layers were mosaic and n‐type with electron concentration 2 · 1020–8 · 1021 cm−3 and mobilities 50‐35 cm2/V · s, respectively.
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