Abstract
Graphene has been enjoyed significant recent attention due to its potential applications in electronic and optoelectronic devices. Graphene is usually prepared via Hummers' method or modified Hummers' methods. These methods are the most suitable for the large-scale production of single graphene at low cost. But their main drawbacks are the use of strong oxidizing agents which make graphene films separating into small sheets and this extremely decrease the electrical conductivity of graphene. Herein, we report an inexpensive, fast and facile method for preparation of a double layer structured transparent, flexible hybrid electrode from silver nanowires (Ag NWs) with chemically converted graphene (CCG) coating on arbitrary substrate. These films dramatically decreases the resistance of graphene films and exhibited high optical transmittance (82.4 %) and low sheet resistance (18 Ω/ sq), which is comparable to ITO transparent electrode. The ratio of direct conductivity to optical conductivity DC/OP = 104 of this electrode is very close to that displayed by commercially available ITO. Especially, the whole fabrication process is carried out at low temperature. The graphene films are spin coated directly on the substrate without transferring therefore eliminating troubles that are brought from the transfer method.
Highlights
Transparent and conducting metal oxides such as indium tin oxide (ITO) have been widely used as an essential element of various optoelectronic devices such as organic lightemitting diode (OLED) panels, touch screen panels, e-paper, and solar cells
Thermal oxidation stability of the Ag NWs films is much poorer than the competing transparent conductors such as carbon nanotubes (CNT) and graphene with theoretical values of charge carrier mobility higher than 200 000 cm2/V and single layer graphene only absorbs about 2.3 % of visible light
These hybrid films show resistance 18 Ω/sq with T = 82.4 % at 550 nm, while previously resistance of Ag NWS and graphene is 75 Ω/sq and 350 000 Ω/sq repectively. This improved the electrical conductivity of the graphene films up to 2000 times
Summary
Transparent and conducting metal oxides such as indium tin oxide (ITO) have been widely used as an essential element of various optoelectronic devices such as organic lightemitting diode (OLED) panels, touch screen panels, e-paper, and solar cells. Vacuum deposited ITO transparent electrode possesses good physical properties such as high optical transmittance and low sheet resistance as a transparent electrode for various optoelectronic devices [1]. It has several drawbacks such as brittleness and high processing temperature. This way is not efficient in decreasing the resistance of the electrode (R = 21 000 Ω/sq with T = 78.13 % at 550 nm). Hybrid transparent electrodes of Ag NWs and graphene are demonstrated in many publication, only few additional attempts toward hybrid with chemical graphene are reported
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