Abstract
The periodic array is fabricated on GaAs substrate by holographic lithography and wet etching. The double exposure for hole array in holographic lithography is adopted to optimized exposure time of 60s, and the optimal time of dot array is 80s. Wet etching solution with 1:1:10 volume ratio of H3PO4, H2O2 and H2O is adopted to etch the hole array for 30 s, and to etch the dot array for 20 s. Images of scanning electron microscopy (SEM) show that the hole array and dot array has a period of 528 nm, with perfect surface morphology, good fringe continuity and uniformity.
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