Abstract
Highly photoconductive hydrogenated amorphous Si-Ge alloys have been prepared from a SiH4/GeH4 gas mixture using a triode glow-discharge reactor. High photoconductivity (Δσp≂10−4 Ω−1 cm−1) under the AM1 (100 mW/cm2) illumination and low dark conductivity (σd=10−8–10−9 Ω−1 cm−1) have been obtained for the optical gap in the range between 1.5 and 1.7 eV.
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