Abstract
Highly-oriented titanium–nitride films were prepared on a non-single-crystalline substrate as a buffer layer of a Co2MnSi film. Co2MnSi films prepared on the titanium–nitride buffer layer showed a high (001)-orientation and at least a B2-ordered phase even for room temperature preparation. The magnetization curve of the Co2MnSi film annealed at 600 °C showed an extremely low coercivity of 1.4 Oe in addition to a high saturation magnetization, which indicated no interdiffusion between a Co2MnSi layer and a buffer layer. These results indicate that titanium nitride is a potential material for applications based on Co2MnSi.
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