Abstract

Surface-barrier detectors have been fabricated with high-resistivity n-type silicon (4 000 – 20 000 ohm·cm) which can operate at reverse biases up to 4000 volts with good energy resolution at room temperature. The best energy resolution obtained with a depletion region deep enough to stop 1 MeV electrons is 13.2 keV for a detector of 8 mm diameter. The best resolution at very high reverse bias is 22.4 keV at 3800 volts bias for a detector of 7 mm diameter. The deepest depletion region obtained is 3.5 mm with a 6 mm diameter 20 000 ohm·cm unit operating at 1800 volts reverse bias. Under these conditions the measured energy resolution for 1 MeV electrons is 35 keV. The conditions necessary for the production of surface barriers capable of withstanding these biases with low noise and low leakage current are discussed in detail.

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