Abstract
A solid phase crystallizing method has been developed to grow a Si crystal at temperatures as low as 550 °C. Using this method, a high-quality thin-film polycrystalline silicon (Poly-Si) was obtained. The largest grain size, examined with x-ray diffraction spectroscopy and scanning electron microscopy images of recrystallized samples, is approximately 1 μm for substrate temperature at 300 °C and annealed at 550 °C for 3 hours.
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