Abstract
The preparation of nanometer aluminum nitrogen (AlN) films with uniform lattice arrangement is of great significance for the manufacture of high-frequency surface acoustic wave (SAW) device. We put forward the two-step growth method and the annealing treatment method for the deposition of (100) AlN thin films. The results show that when the sputtering pressure is 1.2 Pa and the ratio between N2 and Ar is 12:8, the influence of lattice thermal mismatch and anti-phase is the smallest during the nucleation growth at low-temperature stage of (100) AlN/(100) Si films. The root-mean-square (RMS) surface roughness of AlN prepared by the two-step method is reduced from 6.4 nm to 2.1 nm compared with that by common deposition process.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
