Abstract
Cu films were deposited on Si(1 0 0) substrates by applying a negative substrate bias voltage using non-mass separated ion beam deposition (IBD) method. By the SIMS results with Cs + ion beam, the Cu film deposited at V S=0 V was found to contain more impurities than the Cu film deposited at V S=−50 V. On the other hand, from the SIMS results with O 2 + ion beam, it was found that elements which are easy to be positive ions such as B, Mg, Na, Al, K, Ca and Fe seem to be increased slightly as compared to the those of the Cu film deposited at V S=0 V. As a result, higher-purity Cu film deposited at V S=−50 V could be obtained in comparison with the film deposited at V S=0 V. The purification effect of the Cu film deposited at V S=−50 V was described in details.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
