Preparation of high laser-induced damage threshold Ta2O5 films

Abstract

• High LIDT Ta 2 O 5 films were prepared using TaCl 5 as precursor. • We revealed the functions of H 2 O 2 in the sol formation. • The high LIDT was attributed to the nearly free of defects. High laser-induced damage threshold (LIDT) Ta 2 O 5 films were prepared by the sol–gel method using TaCl 5 as a new precursor. The optical properties, surface morphologies, chemical composition, absorption and LIDT of the films were investigated. The results showed that the transparent and homogenous Ta 2 O 5 films had small surface roughness, low absorption and high LIDT even with large number of layers. The maximum LIDT at 1064 nm and 12 ns of the films was 24.8 J/cm 2 . The ion chromatograph and Fourier transform infrared spectrum were used to reveal the functions of the addition of H 2 O 2 in the sol formation. It was shown that H 2 O 2 had two important functions, which were the decrease of Cl element content and the rapid generation of tantalum oxide. The high LIDT achieved was mainly due to the nearly free of defects in the films.