Abstract
GaN single crystals were prepared in a sealed stainless steel tube at 600−800 °C from Ga using a Na flux and N2 from the thermal decomposition of sodium azide, NaN3. The maximum size of the crystals obtained was 2 mm. Oxygen and other impurity elements were not detected in the crystals by AES and EDX. When scaled up, this method may provide large GaN crystals for use as substrates for nitride based lasers.
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