Abstract
Single-crystal hexagonal wurtzite GaN nanowires were successfully synthesized by using plasma-enhanced chemical vapor deposition (PECVD) via vapor-liquid-solid (V-L-S) mechanism, under the condition of non-ammonia at 1050 ℃. Raman spectra show that the as-synthesized nanowires have large disorder surface, in which there is a significantly small size effect. Furthermore, it is also observed that the prepared nanowires have typical photoluminescence characteristics and good field emission properties.
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