Abstract
The Ga3+:ZnO quantum dots/Si solar cells were prepared, based on the polycrystalline silicon. The photoelectric properties, including the absorption and reflection, the electrical properties, the minority carrier lifetime and the quantum efficiency, have been investigated and analyzed. The results showed that the deposed Ga3+:ZnO quantum dots could increase the carrier concentration and the Hall mobility, improve the life of the minority, reduce the series resistance of the photovoltaic device effectively and reduce the energy loss of the polycrystalline silicon solar cell. Thus, the photoelectric response performance parameters of the Ga3+:ZnO/Si solar cells were upgraded degrees and its photoelectric conversion efficiency was improved.
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