Abstract
In this study, we report a new method for the quick, green, and one-step preparation of few-layered molybdenum disulfide (MoS2) nanosheets with wide bandgap. MoS2 nanosheets with small lateral dimension and uniform size distribution were synthesized for various applications. MoS2 powder was synthesized using the hydrothermal method; then, thinned by applying laser irradiation with different energies from 40 to 80 mJ. Transmission electron microscopy (TEM), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), UV-Vis absorption spectra, and photoluminescence (PL) spectra were applied for the characterization of the MoS2 nanosheets in terms of morphology, crystal structures, and optical properties. The widest calculated bandgap 4.7 eV was for the sample under 80 mJ laser energy. The results confirmed the successful preparation of highly pure, uniform, and few-layered MoS2 nanosheets. Furthermore, it was possible to enhance the production rate of MoS2 nanosheets (including nanosheets and nanoparticles) through laser irradiation. Thus, the present paper introduces a simple and green alternative approach for preparing few-layered MoS2 nanosheets of transition metal dichalcogenides or other layered materials.
Highlights
Few-layered materials along with two-dimensional materials have attracted the most attention due to their diverse properties and applications [1,2,3]
The wide bandgap (WBG) semiconductors are significant scientifically and the samples and its intensity decreases. This property is attributed to the existence of polydispersity technologically, and they have become the main materials to be applied in high-performance of MoS2 nanosheets [46,65], the hot PL from Brillouin zone’s K point, and many trap states in MoS2 optoelectronic and electronic devices
A new, quick, green, and one-step method was introduced for preparing few-layered MoS2 nanosheets by applying the laser irradiation
Summary
Few-layered materials along with two-dimensional materials have attracted the most attention due to their diverse properties and applications [1,2,3]. The structures of these layered materials are hexagonally packed Due to this property, the TMDs, such as MoS2 , WS2 , WTe2 , TiS2 , TaS2 , ZrS2 , or graphite are exfoliated to prepare the 2D materials. MoS2 has been favored greatly due to its inherent structural characteristics that are composed of strong covalently S-Mo-S sheets detained by van der Waals interactions among the layered structures [22] These weak interlayer interactions make the reduction of MoS2 layers possible by micromechanical exfoliation from bulk crystalline [23]. MoS2 turns into a direct bandgap semiconductor if thinned, while bulk MoS2 has an indirect bandgap, which is favorable for optoelectronics [24,25,26] Due to this distinctive structure and features, MoS2 can be used in numerous fields such as biomedicine, energy storage, gas sensing, catalysis, and electronics engineering [27].
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