Preparation of Eu 2+-doped AlN phosphors by plasma activated sintering

Abstract

Eu 2+-doped AlN phosphors were prepared by plasma activated sintering at 1600–1850 °C for 5 min and using AlN, SiC, and Eu 2O 3 as starting materials. The effect of Si concentration on the phase purity and photoluminescence (PL) properties of the prepared phosphors was investigated. The doping of Si from SiC favored the formation of pure wurtzite-type AlN phase and doping of Eu 2+ into the AlN lattice. The prepared AlN:Eu 2+ phosphors exhibited a strong blue emission at 465 nm under the excitation at 330 nm when Si was doped. The highest PL intensity was achieved when the phosphors were sintered at 1800 °C.