Preparation of electrical insulating films for high temperature devices by ion beam assisted plasma CVD

Abstract

Ion beam assisted plasma chemical vapor deposition (CVD), which is a plasma CVD combined with accelerated ion beams, was developed and applied to producing electrical insulating films for thin film sensors in order to improve electrical resistance at high temperature. Aluminum oxide (Al 2O 3) films were prepared on nickel based superalloy (inconel 718) by ion beam assisted plasma CVD at the various incident angles of the ion beams to a substrate. The crystal structure of these films was analyzed by X-ray diffraction. The electrical resistance of these films was measured in the range of room temperature to 850 °C. The incident angle influenced the orientation of Al 2O 3 crystals. Al 2O 3 films prepared by plasma CVD at the substrate temperature of 800 °C with simultaneous irradiation of Krypton ions (10 keV) at an angle from 40 ° to 45 ° indicated the highest electrical resistance.