Abstract
MnO2 nanolayers (~29 nm) produced on the surface of single-crystal GaAs wafers by magnetron sputtering have been shown to act as oxygen transfer agents for the thermal oxidation of the semiconductor. The presence of MnO2 increases the oxide film growth rate by three to nine times relative to stimulator-free oxidation of GaAs. The films thus grown range in thickness from 35 to 200 nm and possess good dielectric properties (resistivity on the order of ~1010 Ω cm and dielectric strength in the range (5–8) × 106 V/cm). According to X-ray diffraction data, the films are enriched in oxidized arsenic and have a regular grain structure in the surface layer, with a roughness height within 30 nm (according to atomic force microscopy data).
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