Abstract
We used a new technological method of pulsed electron beam (e-beam) ablation to prepare high quality CuInSe/sub 2/ (CIS) thin films. This method is analogous to pulsed UV-laser ablation but costs significantly lower. In this method, the CIS deposition was made by pulsed, high current, and magnetically self pinched electron beam produced in a low pressure channel spark camera at the following conditions: high voltage of 10-20 kV, pulse duration of 100 ns, repetition rate of 1-5 Hz, power density <500 MW/cm/sup 2/, argon pressure of 1-3 Pa, substrate temperatures of 250-550/spl deg/C. CIS thin films are found to have a strong preferential [112] orientation, the chalcopyrite structure, columnar grain microstructure, and specular surface consisting of a smooth background of closely arranged grains as well as precipitates, and spherical particles disposed on the film surface. The Cu/In ratio in the films was found to be temperature dependent and in the range of 0.9-1.2. A well-defined absorption edge near the band gap with the energy gap of Eg=0.99 eV was observed for CIS films. Selenium doping procedure of the In-rich thin films deposited at T/sub sub/=250/spl deg/C were made to improve the microstructure of these films.
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