Preparation of CuInSe2 thin films by selenization of CuInO precursors

Abstract

Abstract Polycrystalline CuInSe2 films were prepared by selenization of CuInO films. CuInO precursor were prepared from Cu2In2O5 target by rf-magnetron sputtering and pulsed laser deposition. The CuInO films were converted into CuInSe2 films by annealing in H2Se gas atmosphere. The CuInSe2 films obtained by selenizing CuInO films prepared by a pulsed laser deposition, contained an impurity phase such as In2O3. But singlephase chalcopyrite CuInSe2 films were obtained by selenizing the near stoichiometric CuInO film prepared by a rf-magnetron sputtering at a temperature of 450°C.