Preparation of CuInSe 2 thin films by pulsed laser deposition the Cu–In alloy precursor and vacuum selenization

Abstract

CuInSe 2 (CIS) films were prepared by pulsed laser deposition (PLD) Cu–In alloy precursors on Mo-coated sodalime glass substrates and vacuum selenization. Cu–In alloy precursors showed the dominant Cu 11In 9 phase and all the selenized CIS films showed the single chalcopyrite structure with preferred (112) orientation by XRD method. The cross-sectional morphology was observed by SEM. The composition of the CIS films was also measured by XRF. The crystallized films showed Raman spectra with a dominant A 1 mode at 174 cm −1, generally observed in I–III–V I 2 chalcopyrite compounds and no additional peak at 258 cm −1 which was observed in other reports. An energy band gap of about 0.95 eV and an absorption coefficient near 10 5 cm −1 were obtained by absorption spectroscopy measurement.