Abstract
Cu3N/MoS2 heterojunction was prepared through magnetron sputtering, and its optical band gap was investigated. Results showed that the prepared Cu3N/MoS2 heterojunction had a clear surface heterojunction structure, uniform surface grains, and no evident cracks. The optical band gap (1.98 eV) of Cu3N/MoS2 heterojunction was obtained by analyzing the ultraviolet-visible transmission spectrum. The valence and conduction band offsets of Cu3N/MoS2 heterojunction were 1.42 and 0.82 eV, respectively. The Cu3N film and multilayer MoS2 formed a type-II heterojunction. After the two materials adhered to form the heterojunction, the interface electrons flowed from MoS2 to Cu3N because the latter had higher Fermi level than the former. This behavior caused the formation of additional electrons in the Cu3N and MoS2 layers and the change in optical band gap, which was conducive to the charge separation of electrons in MoS2 or MoS2 holes. The prepared Cu3N/MoS2 heterojunction has potential application in various high-performance photoelectric devices, such as photocatalysts and photodetectors.
Highlights
Environmental problems have worsened due to the rapid consumption of fossil fuels
We found that the Cu3 N/MoS2 heterojunction has better optical performance
Cu3 N/MoS2 heterojunction was fabricated through magnetron sputtering, and its crystal structure, chemical composition, surface morphology, and band gap structure were explored
Summary
Environmental problems have worsened due to the rapid consumption of fossil fuels. efficient, energy-saving, and environmentally friendly methods must be developed to solve various pollution problems [1]. Heterojunction photocatalysts typically have the following advantages: strong light absorption [11], efficient charge separation and transport [12], cocatalyst effect, and strong light absorption stability [13] Among these heterojunctions, Cu3 N/MoS2 shows promise as a photocatalyst because Cu3 N is an outstanding semiconductor material that can substantially enhance the photoelectric performance of MoS2 or introduce new functions into such heterojunctions. Cu3 N has been proposed for battery materials [2,29], catalyst additives [30], spin tunnel junction [31], memory [32], and electric transport materials [33] due to its wide range of optical band gap, low temperature of thermal decomposition, and excellent chemical activity Heterojunctions, such as MoS2 /ZnO [13], MoS2 /TiO2 [11], and TiO2 /WO3 [34], remarkably improve the electrical conductivity and optical properties of materials. Cu3 N/MoS2 heterojunction was fabricated through magnetron sputtering, and its crystal structure, chemical composition, surface morphology, and band gap structure were explored
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