Preparation of Cu2ZnSnSe4 Absorber Layer by Nonvacuum Method

Abstract

Cu2ZnSnSe4 (CZTSe) was prepared by a nonvacuum, solution-based method, and used as an absorber layer in CZTSe solar cells. Copper(II) acetate monohydrate, zinc(II) acetate dehydrate, and tin(II) chloride dihydrate were used as the starting materials of the sol–gel method, and 2-methoxyethanol and monoethanolamine were used as the solvent and stabilizer, respectively. The precursor solution was deposited on Mo-coated soda lime glass (SLG) by spin-coating, then annealed at 570 °C in selenium atmosphere to convert it into the CZTSe absorber layer. The synthesized CZTSe absorber layer phase was identified by X-ray diffraction (XRD) and Raman spectrum analyses. By increasing the number of spin-coating/drying cycles, the CZTSe absorber layer thickness was increased and resulted in a current density increase in the current–voltage curve. Scanning electron microscopy (SEM) and energy dispersive spectrometry (EDS) were carried out to confirm the absorber layer thickness and metal ratios. The highest efficiency of the solar cell was 1.08% with a 1.45 µm absorber layer.