Abstract
Polycrystalline carbon nitride films have been deposited on Si(111) substrates by d.c. and r.f. plasma-assisted hot filament chemical vapor deposition using a mixture of NH3, CH4 and H2. For films prepared b2 both methods, the X-ray diffraction peaks match those of the theoretical β-C3N4 structure. Raman scattering detects no diamond, graphite or amorphous carbon in the films. XPS analysis shows that both films contain mainly CN, CN, and CN bonding structures. The N to C concentration ratio in the d.c. and r.f. plasma-assisted films is estimated to be 0.36 and 0.16, respectively.
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