Abstract
The formation of cobalt-nitride thin films by the ion reacting deposition method was investigated. A low-energy broad-beam ion source (Kaufman type) was used for ionizing nitrogen. X-ray diffraction spectra revealed that the N-rich cobalt nitrides Co 3 N and Co 2 N were formed only at low ion current densities during deposition. The magnetic properties of the films changed suddenly with increasing Jion. H c was maximum at J ion =1.5 (mA/m2)/(A/s), above which the N-poor compound Co 4 N was formed. The nitrogen which was contained in films but was not involved in the nitriding reaction, was degassed above 250°.
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